Full Description

1.1This specification details the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging.

1.2Sputtering target purity, grain size, inner quality, bonding, dimension, and appearance specifications are included in this specification along with references for qualification test methods. Reliability, certification, traceability, and packaging requirements are also included.

1.2.1Purity Requirements:

1.2.1.1Metallic element impurities, and

1.2.1.2Non-metallic element impurities.

1.2.2Grain Size Requirements-Grain size.

1.2.3Inner Quality Requirements-Internal defect.

1.2.4Bonding Requirements:

1.2.4.1Backing plate, and

1.2.4.2Bonding ratio.

1.2.5Configuration Requirements:

1.2.5.1Dimension,

1.2.5.2Tolerance, and

1.2.5.3Surface roughness.

1.2.6Appearance Requirements-Surface cleanness.

1.3The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.4This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.