Full Description

1.1 This test method covers measurement of the diameter of silicon wafers up to 205 mm in diameter. Other semiconductor materials with a circular shape can also be measured.

1.2 This test method is independent of surface finish and may be performed on edge-contoured specimens.

1.3 This test method is to be carried out at a temperature of 23 + 5 the values stated in acceptable metric units in parentheses are for information only. For wafers of diameter larger than 3 in., the values stated in acceptable metric units are to be regarded as standard whether or not they appear with parentheses; inch-pound units are for information only.