M00017060
New product
ISO DIS 17109 2014 Edition, May 12, 2014 SURFACE CHEMICAL ANALYSIS - DEPTH PROFILING - A METHOD FOR SPUTTER RATE DETERMINATION IN X-RAY PHOTOELECTRON SPECTROSCOPY, AUGER ELECTRON SPECTROSCOPY AND SECONDARY-ION MASS SPECTROMETRY SPUTTER DEPTH PROFILING USING SINGLE ANDMULTI-LAYER THIN FILMS
In stock
Warning: Last items in stock!
Availability date: 07/14/2021
Description / Abstract: This International Standard specifies a method forthe calibration of the sputtered depth of a materialfrom a measurement of its sputtering rate underset sputtering conditions using a single ormultilayer reference sample with layers of thesame material as that requiring depth calibration.The method has a typical accuracy in the range 5to 10% for layers 20 to 200 nm thick when sputterdepth profiled using AES, XPS and SIMS. Thesputtering rate is determined from the layerthickness and the sputtering time between relevantinterfaces in the reference sample and this is usedwith the sputtering time to give the thickness of a sample to be measured. The determined ion sputteringrate may be used for the prediction of ionsputtering rates for a wide range of other materialsso that depth scales and sputtering times in thosematerials may be estimated via tabulated values ofsputtering yields and atomic densities.