M00000022
New product
ISO 17560 2nd Edition, September 15, 2014 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
In stock
Warning: Last items in stock!
Availability date: 07/13/2021
Description / Abstract: This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, polycrystal, or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3 and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.