ISO 14706

Description / Abstract: This International Standard specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following:

— elements of atomic number from 16 (S) to 92 (U);

— contamination elements with atomic surface densities from 1 × 10¹⁰ atoms/cm² t o 1 × 10¹⁴ atoms/cm²;

— contamination elements with atomic surface densities from 5 × 10⁸ atoms/cm² to 5 × 10¹² atoms/cm² using a VPD (vapour-phase decomposition) specimen preparation method (see 3.4).